Vladimir Dyakonov (University of Würzburg)

Spin Defects in hexagonal Boron Nitride for Sensing Applications

Abstract: 2D materials have emerged over the last decade as the new playground for quantum photonics devices. Among them, hexagonal boron nitride (hBN) is an interesting candidate, mainly because of its crystallographic compatibility with different 2D materials, but also because of its ability to harbour optically active defects that generate single photons. The negatively charged boron vacancy was the first intrinsic optically addressable spin defect in hBN reported in 2020, allowing coherent control at room temperature. Although other types of spin centres have been found in this material since then, this spin-1 colour centre remains the only one with a clearly elucidated structure. Practical applications of hBN spin centres as intrinsic magnetic field, temperature, pressure, etc. sensors in van der Waals heterostructures are hence envisioned. To further boost the quantum sensing applications of this spin defect in hBN, we are currently investigating the dynamics of the intermediate state, also known as the metastable state, because it is likely to trap electrons for a certain time, which affects the subsequent sensing protocol when the pulsed magnetic resonance experiment is designed. 

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